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SM20N06 - 60V N-Channel MOSFET

Features

  • Low Intrinsic Capacitances.
  • Excellent Switching Characteristics.
  • Extended Safe Operating Area.
  • Unrivalled Gate Charge :Qg= 25.3nC (Typ. ).
  • BVDSS=60V,I D=20A.
  • RDS(on) : 0.035Ω (Max) @VG=10V.
  • 100% Avalanche Tested 1 3 1.Gate (G) 2.Drain (D) 3.Source (S) Absolute Maximum Ratings (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VDSS ID Drain-Source Voltage Drain Current 60 V TC=25℃ 20 A TC=100℃ 14 VGS(TH).

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Datasheet preview – SM20N06

Datasheet Details

Part number SM20N06
Manufacturer SemiMOS
File Size 905.69 KB
Description 60V N-Channel MOSFET
Datasheet download datasheet SM20N06 Datasheet
Additional preview pages of the SM20N06 datasheet.

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Full PDF Text Transcription

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SM20N06 60V N-Channel MOSFET TO-252 2 SM20N06 KONGSON 60V N-Channel MOSFET Features: □ Low Intrinsic Capacitances. □ Excellent Switching Characteristics. □ Extended Safe Operating Area. □ Unrivalled Gate Charge :Qg= 25.3nC (Typ.). □ BVDSS=60V,I D=20A □ RDS(on) : 0.035Ω (Max) @VG=10V □ 100% Avalanche Tested 1 3 1.Gate (G) 2.Drain (D) 3.
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