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SM20N50 - 500V N-Channel MOSFET

Features

  • Low Intrinsic Capacitances.
  • Excellent Switching Characteristics.
  • Extended Safe Operating Area.
  • Unrivalled Gate Charge :Qg=50 nC (Typ. ).
  • BVDSS=500V,ID=20A.
  • RDS(on) : 0.27Ω (Max) @VG=10V.
  • 100% Avalanche Tested 1.Gate (G) 2.Drain (D) 3.Sourse (S) Absolute Maximum Ratings (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VDSS ID Drain-Source Voltage Drain Current 500 V TC=25℃ 20 TC=100℃ 12.9 A VGS(TH) Gat.

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Datasheet Details

Part number SM20N50
Manufacturer SemiMOS
File Size 886.95 KB
Description 500V N-Channel MOSFET
Datasheet download datasheet SM20N50 Datasheet
Additional preview pages of the SM20N50 datasheet.

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Full PDF Text Transcription

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SM20N50 500V N-Channel MOSFET TO-3P SM20N50 kongson Features: □ Low Intrinsic Capacitances. □ Excellent Switching Characteristics. □ Extended Safe Operating Area. □ Unrivalled Gate Charge :Qg=50 nC (Typ.). □ BVDSS=500V,ID=20A □ RDS(on) : 0.27Ω (Max) @VG=10V □ 100% Avalanche Tested 1.Gate (G) 2.Drain (D) 3.Sourse (S) Absolute Maximum Ratings (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VDSS ID Drain-Source Voltage Drain Current 500 V TC=25℃ 20 TC=100℃ 12.
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