SemiMOS SM30N10
100V N-Channel MOSFET
| Part No. | SM30N10 |
|---|---|
| Datasheet | SM30N10 Download |
| Manufacturer | SemiMOS |
| Description | 100V N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
: □ Low Intrinsic Capacitances. □ Excellent Switching Characteristics. □ Extended Safe Operating Area. □ Unrivalled Gate Charge :Qg= 31nC (Typ.). □ BVDSS=100V,ID= 30A □ RDS(on) : 0.07Ω (Max) @VG=10V □ 100% Avalanche TestedABSOLUTE MAXIMUM RATINGS
* (Tc=25℃ Unless otherwise noted) Drain-Source Voltage Parameter Gate-Source Voltage Drain Current-Continuous Drain Current-Continuous(TC=100℃) Pulsed Drain Current Maximum Power Dissipation Single pulse avalanche energy (Note 5) Operating Junction and Storage Temperature Range Symbol VDS VGS ID ID (100℃) IDM PD EAS TJ,TSTG 1.Gate (G) 2.Drain (D) 3.Source (S) Limit 100 ±20 30 12 60 55 250 -55 To 150 Unit V V A A A W mJ ℃ Thermal Characteristics Thermal Resistance,Junction-to-Case(Note 2) RθJC 2.27 ℃/W 1 SM30N10 100V N-Channel MOSFETELECTRICAL CHARACTERISTICS
(TC=25℃unless otherwise noted) Parameter Symbol Condition Off Characteristics Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250μA Zero Gate Voltage Drain Current IDSS VDS=100V,VG...
