SM60R280P-P
SM60R280P-P is 600V N-Channel COOL MOSFET manufactured by SemiMOS.
Features
:
- Low Intrinsic Capacitances.
- Excellent Switching Characteristics.
- Extended Safe Operating Area.
- Unrivalled Gate Charge :Qg= 43n C (Typ.).
- BVDSS=600V,ID=15A
- RDS(on) : 0.28Ω (Max) @VG=10V
- 100% Avalanche Tested
SM60R280P-P TO-220
SM60R280P-F
TO-220F
1.Gate (G) 2.Drain (D) 3.Source (S)
Absolute Maximum Ratings (TC=25℃ unless otherwise noted)
Symbol
Parameter
VDSS ID
Drain-Source Voltage
Drain Current -Continuous (TC = 25℃) -Continuous (TC = 100℃)
Drain Current
- Pulsed
(Note 1)
VGSS
Gate-Source voltage
Single Pulsed Avalanche Energy (Note 2)
Avalanche Current
(Note 1)
EAR dv/dt
Repetitive Avalanche Energy Peak Diode Recovery dv/dt
(Note 1) (Note 3)
PD TJ, TSTG
Power Dissipation (TC = 25℃)
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds
SM60R280P-S...
