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SDA10S120 - Silicon Carbide Power Schottky Diode

Key Features

  • - Positive Temperature Coefficient for Ease of Paralleling - Temperature Independent Switching Behavior - 175 °C Maximum Operating Temperature - Zero Reverse Recovery Current - Zero Forward Recovery Voltage 3 Silicon Carbide SDA10S120 Product Summary VDC 1200 V IF 10 A Qc 40 nC K(3).

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Datasheet Details

Part number SDA10S120
Manufacturer SemiSouth
File Size 186.09 KB
Description Silicon Carbide Power Schottky Diode
Datasheet download datasheet SDA10S120 Datasheet

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PRELIMINARY Silicon Carbide Power Schottky Diode Features: - Positive Temperature Coefficient for Ease of Paralleling - Temperature Independent Switching Behavior - 175 °C Maximum Operating Temperature - Zero Reverse Recovery Current - Zero Forward Recovery Voltage 3 Silicon Carbide SDA10S120 Product Summary VDC 1200 V IF 10 A Qc 40 nC K(3) Applications: - Solar Inverter - SMPS - Power Factor Correction - Induction Heating - UPS - Motor Drive TO-220 2 1 K(1) A(2) Internal Schematic MAXIMUM RATINGS Parameter Repetitive Peak Reverse Voltage DC Blocking Voltage Continuous Forward Current Peak Repetitive Forward Current Symbol VRRM VDC IF IFRM Non-Repetitive Forward Surge Current IFSM Power Dissipation PTOT Operating and Storage Temperature Tj, Tstg Conditions Tj = 25 °C TC