The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
Silicon Carbide Power Schottky Diode
Features: - Positive Temperature Coefficient for Ease of Paralleling - Temperature Independent Switching Behavior - 175 °C Maximum Operating Temperature - Zero Reverse Recovery Current - Zero Forward Recovery Voltage
Silicon Carbide
SDB05S120
Product Summary
VDC 1200
V
IF 5 A
Qc 20 nC
Applications: - Solar Inverter - SMPS - Power Factor Correction - Induction Heating - UPS - Motor Drive
True 2 Lead DPAK (TO-252)
Internal Schematic
MAXIMUM RATINGS
Parameter
Repetitive Peak Reverse Voltage DC Blocking Voltage Continuous Forward Current Peak Repetitive Forward Current
Symbol
VRRM VDC IF IFRM
Non-Repetitive Forward Surge Current
IFSM
Power Dissipation
PD
Operating and Storage Temperature Tj, Tstg
Conditions Tj = 25 °C
TC < 160 °C TC = 125 °