- Positive Temperature Coefficient for Ease of Paralleling - Temperature Independent Switching Behavior - 175 °C Maximum Operating Temperature - Zero Reverse Recovery Current - Zero Forward Recovery Voltage
4
Silicon Carbide
SDP10S120D
Product Summary
VDC 1200
V
IF 10 A
Qc 39 nC
K(4).
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Silicon Carbide Power Schottky Diode
Features: - Positive Temperature Coefficient for Ease of Paralleling - Temperature Independent Switching Behavior - 175 °C Maximum Operating Temperature - Zero Reverse Recovery Current - Zero Forward Recovery Voltage
4
Silicon Carbide
SDP10S120D
Product Summary
VDC 1200
V
IF 10 A
Qc 39 nC
K(4)
Applications: - Solar Inverter - SMPS - Power Factor Correction - Induction Heating - UPS - Motor Drive
TO-247
3 2 1
A(1)
A(3)
K(2)
Internal Schematic
MAXIMUM RATINGS
Parameter
Symbol
Repetitive Peak Reverse Voltage DC Blocking Voltage
Continuous Forward Current (Per Leg / Per Device)
Peak Repetitive Forward Current (Per Leg / Per Device)
Non-Repetitive Forward Surge Current (Per Leg / Per Device)
Power Dissipation (Per Leg / Per Device)
VRRM VD
SDP10S120D Datasheet
