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SDP60S120D - Silicon Carbide Power Schottky Diode

Key Features

  • - Positive Temperature Coefficient for Ease of Paralleling - Temperature Independent Switching Behavior - 175 °C Maximum Operating Temperature - Zero Reverse Recovery Current - Zero Forward Recovery Voltage 4 Silicon Carbide SDP60S120D Product Summary VDC 1200 V IF 60 A Qc 260 nC K(4).

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Datasheet Details

Part number SDP60S120D
Manufacturer SemiSouth
File Size 136.58 KB
Description Silicon Carbide Power Schottky Diode
Datasheet download datasheet SDP60S120D Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Silicon Carbide Power Schottky Diode Features: - Positive Temperature Coefficient for Ease of Paralleling - Temperature Independent Switching Behavior - 175 °C Maximum Operating Temperature - Zero Reverse Recovery Current - Zero Forward Recovery Voltage 4 Silicon Carbide SDP60S120D Product Summary VDC 1200 V IF 60 A Qc 260 nC K(4) Applications: - Solar Inverter - SMPS - Power Factor Correction - Induction Heating - UPS - Motor Drive TO-247 3 2 1 A(1) A(3) K(2) Internal Schematic MAXIMUM RATINGS Parameter Repetitive Peak Reverse Voltage DC Blocking Voltage Continuous Forward Current (Per Leg / Per Device) Peak Repetitive Forward Current Symbol VRRM VDC IF IFRM Conditions Tj = 25 °C TC < 145 °C TC < 100 °C TC = 125 °C, D = 0.