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SJDP120R085 - Normally-On Trench Silicon Carbide Power JFET

Features

  • - Positive Temperature Coefficient for Ease of Paralleling - Extremely Fast Switching with No "Tail" Current at 150 °C - RDS(on) typical of 0.075 Ω - Voltage Controlled - Low Gate Charge - Low Intrinsic Capacitance 4 Product Summary BVDS RDS(ON)max ETS,typ 1200 0.085 290 V Ω µJ D(2,4) G(1).

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Datasheet Details

Part number SJDP120R085
Manufacturer SemiSouth
File Size 316.38 KB
Description Normally-On Trench Silicon Carbide Power JFET
Datasheet download datasheet SJDP120R085 Datasheet
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Full PDF Text Transcription

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Silicon Carbide SJDP120R085 Normally-On Trench Silicon Carbide Power JFET Features: - Positive Temperature Coefficient for Ease of Paralleling - Extremely Fast Switching with No "Tail" Current at 150 °C - RDS(on) typical of 0.075 Ω - Voltage Controlled - Low Gate Charge - Low Intrinsic Capacitance 4 Product Summary BVDS RDS(ON)max ETS,typ 1200 0.
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