SJDP120R085 Overview
Silicon Carbide SJDP120R085 Normally-On Trench Silicon Carbide Power JFET.
SJDP120R085 Key Features
- Positive Temperature Coefficient for Ease of Paralleling
- Extremely Fast Switching with No "Tail" Current at 150 °C
- RDS(on) typical of 0.075 Ω
- Voltage Controlled
- Low Gate Charge
- Low Intrinsic Capacitance