SJEP120R063 - Normally-OFF Trench Silicon Carbide Power JFET

Features

- Compatible with Standard Gate Driver ICs - Positive Temperature Coefficient for Ease of Paralleling - Temperature Independent Switching Behavior - 150 °C Maximum Operating Temperature - RDS(on)max of 0.063 Ω - Voltage Controlled - Low Gate Charge 4 - Low Intrinsic Capacitance Product Summary BVDS 1200 V RDS(ON)max 0.063 Ω ETS,typ 440 µJ D(2,4) G(1).

SJEP120R063 Normally-OFF Trench Silicon Carbide Power JFET by SemiSouth - Datasheet Preview — Datasheet preview – SJEP120R063

Datasheet Details

Part number	SJEP120R063
Manufacturer	SemiSouth
File Size	386.95 KB
Description	Normally-OFF Trench Silicon Carbide Power JFET
Datasheet	SJEP120R063 Datasheet
Additional preview pages of the SJEP120R063 datasheet.

📁 Similar Datasheet

SJE-103D - Miniature Power Relay (SANYOU)
SJE-103D-F - Miniature Power Relay (SANYOU)
SJE-103DM - Miniature Power Relay (SANYOU)
SJE-103DM-F - Miniature Power Relay (SANYOU)
SJE-103L - Miniature Power Relay (SANYOU)
SJE-103L-F - Miniature Power Relay (SANYOU)
SJE-103LM - Miniature Power Relay (SANYOU)
SJE-103LM-F - Miniature Power Relay (SANYOU)
SJE-105D - Miniature Power Relay (SANYOU)
SJE-105D-F - Miniature Power Relay (SANYOU)

Other Datasheets by SemiSouth

SJEP170R550 - Normally-OFF Trench Silicon Carbide Power JFET

Full PDF Text Transcription

Click to expand full text

PRELIMINARY Silicon Carbide SJEP120R063 Normally-OFF Trench Silicon Carbide Power JFET Features: - Compatible with Standard Gate Driver ICs - Positive Temperature Coefficient for Ease of Paralleling - Temperature Independent Switching Behavior - 150 °C Maximum Operating Temperature - RDS(on)max of 0.063 Ω - Voltage Controlled - Low Gate Charge 4 - Low Intrinsic Capacitance Product Summary BVDS 1200 V RDS(ON)max 0.

Published: Feb 10, 2017 |