SJEP120R063 Overview
PRELIMINARY Silicon Carbide SJEP120R063 Normally-OFF Trench Silicon Carbide Power JFET.
SJEP120R063 Key Features
- patible with Standard Gate Driver ICs
- Positive Temperature Coefficient for Ease of Paralleling
- Temperature Independent Switching Behavior
- 150 °C Maximum Operating Temperature
- RDS(on)max of 0.063 Ω
- Voltage Controlled
- Low Gate Charge
- Low Intrinsic Capacitance