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SJEP170R550 - Normally-OFF Trench Silicon Carbide Power JFET

Features

  • - Compatible with Standard Gate Driver ICs - Positive Temperature Coefficient for Ease of Paralleling - Temperature Independent Switching Behavior - 175 °C Maximum Operating Temperature - RDS(on)max of 0.550 Ω - Voltage Controlled - Low Gate Charge 4 - Low Intrinsic Capacitance Product Summary BVDS 1700 V RDS(ON)max 0.550 Ω ETS,typ 74 µJ D(2,4) G(1).

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Datasheet Details

Part number SJEP170R550
Manufacturer SemiSouth
File Size 214.93 KB
Description Normally-OFF Trench Silicon Carbide Power JFET
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Silicon Carbide SJEP170R550 Normally-OFF Trench Silicon Carbide Power JFET Features: - Compatible with Standard Gate Driver ICs - Positive Temperature Coefficient for Ease of Paralleling - Temperature Independent Switching Behavior - 175 °C Maximum Operating Temperature - RDS(on)max of 0.550 Ω - Voltage Controlled - Low Gate Charge 4 - Low Intrinsic Capacitance Product Summary BVDS 1700 V RDS(ON)max 0.
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