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SBP13007-H1 - High Voltage Fast-Switching NPN Power Transistor

General Description

This device is designed for high voltage, high speed switching characteristic,especially suitable for ballast system.

Key Features

  • - Very High Switching Speed (Typical 60ns@5.0A) - Minimum Lot-to-Lot hFE Variation - Short storge time - Wide Reverse Bias S. O. A Symbol ○ 2.Collector 1.Base ○ c ○ 3.Emitter General.

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Datasheet Details

Part number SBP13007-H1
Manufacturer SemiWell Semiconductor
File Size 665.12 KB
Description High Voltage Fast-Switching NPN Power Transistor
Datasheet download datasheet SBP13007-H1 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SemiWell Semiconductor SBP13007- H1 High Voltage Fast-Switching NPN Power Transistor Features - Very High Switching Speed (Typical 60ns@5.0A) - Minimum Lot-to-Lot hFE Variation - Short storge time - Wide Reverse Bias S.O.A Symbol ○ 2.Collector 1.Base ○ c ○ 3.Emitter General Description TO-220 This device is designed for high voltage, high speed switching characteristic,especially suitable for ballast system. 1 2 3 Absolute Maximum Ratings Symbol VCES VCEO VEBO IC ICM IB IBM PC TSTG TJ Parameter Collector-Emitter Voltage ( VBE = 0 ) Collector-Emitter Voltage ( IB = 0 ) Emitter-Base Voltage ( IC = 0 ) Collector Current Collector Peak Current ( tP < 5 ms ) Base Current Base Peak Current ( tP < 5 ms ) Total Dissipation at TC = 25 °C Storage Temperature Max.