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SFD30N06 - N-Channel MOSFET

General Description

This Power MOSFET is produced using SemiWell’s advanced planar stripe, DMOS technology.

This latest technology has been especially designed to minimize on-state resistance, have a low gate charge with superior switching performance, and rugged avalanche characteristics.

Key Features

  • Low RDS(on) (0.04Ω )@VGS=10V Gate Charge (Typical 27nC) Improved dv/dt Capability 100% Avalanche Tested Maximum Junction Temperature Range (150°C) Symbol ◀ { { 2. Drain.
  • 1. Gate ▲.
  • { 3. Source General.

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Datasheet Details

Part number SFD30N06
Manufacturer SemiWell Semiconductor
File Size 1.17 MB
Description N-Channel MOSFET
Datasheet download datasheet SFD30N06 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com SemiWell Semiconductor SFD30N06 N-Channel MOSFET Features ■ ■ ■ ■ ■ Low RDS(on) (0.04Ω )@VGS=10V Gate Charge (Typical 27nC) Improved dv/dt Capability 100% Avalanche Tested Maximum Junction Temperature Range (150°C) Symbol ◀ { { 2. Drain ● 1. Gate ▲ ● ● { 3. Source General Description This Power MOSFET is produced using SemiWell’s advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a low gate charge with superior switching performance, and rugged avalanche characteristics. This Power MOSFET is well suited for synchronous DC-DC Converters and Power Management in portable and battery operated products.