SFP830
Description
This Power MOSFET is produced using SemiWell’s advanced planar stripe, DMOS technology.
Key Features
- SFP830 N-Channel MOSFET Symbol ◀ {
- manufactured High ruggedness RDS(on) (Max 1.5 Ω )@VGS=10V {
- Gate Charge (Typical 28nC) Improved dv/dt Capability
- 100% Avalanche Tested
- Maximum Junction Temperature Range (150°C)
