SFP830 Overview
This Power MOSFET is produced using SemiWell’s advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. This devices is specially well suited for half bridge and full bridge resonant topolgy like a electronic lamp ballast.
SFP830 Key Features
- SFP830
- Gate Charge (Typical 28nC) Improved dv/dt Capability
- 100% Avalanche Tested
- Maximum Junction Temperature Range (150°C)