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SFP840 - N-Channel MOSFET

General Description

This Power MOSFET is produced using SemiWell’s advanced planar stripe, DMOS technology.

This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics.

Key Features

  • High ruggedness RDS(on) (Max 0.85 Ω )@VGS=10V Gate Charge (Typical 48nC) Improved dv/dt Capability, High ruggedness 100% Avalanche Tested Maximum Junction Temperature Range (150°C) Symbol ◀ { { 2. Drain.
  • www. DataSheet4U. com.
  • 1. Gate ▲.
  • { 3. Source General.

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Datasheet Details

Part number SFP840
Manufacturer SemiWell Semiconductor
File Size 908.93 KB
Description N-Channel MOSFET
Datasheet download datasheet SFP840 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SemiWell Semiconductor SFP840 N-Channel MOSFET Features ■ ■ High ruggedness RDS(on) (Max 0.85 Ω )@VGS=10V Gate Charge (Typical 48nC) Improved dv/dt Capability, High ruggedness 100% Avalanche Tested Maximum Junction Temperature Range (150°C) Symbol ◀ { { 2. Drain ● www.DataSheet4U.com ■ ■ ■ ■ 1. Gate ▲ ● ● { 3. Source General Description This Power MOSFET is produced using SemiWell’s advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. This devices is specially well suited for half bridge and full bridge resonant topolgy like a electronic lamp ballast.