SFS9410 Datasheet | SemiWell Semiconductor

Features - RDS(on) (Max 0.028Ω )@VGS=10V RDS(on) (Max 0.042Ω )@VGS=4.5V Gate Charge (Typical 18n C) Maximum Junction Temperature Range (150°C) Available in Tape and Reel Symbol 5 6 7 8 4 3 2 1 - - - General Description This Power MOSFET is produced using Semiwell’s advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a low gate charge with superior switching performance, and rugged avalanche characteristics. This Power MOSFET is well suited for power management circuit or DC-DC converter. 8-SOIC .. Absolute Maximum Ratings Symbol VDSS ID IDM VGS PD TSTG, TJ TL Drain to Source Voltage Continuous Drain Current(@TA = 25°C) Drain Current Pulsed Gate to Source Voltage Total Power Dissipation Single Operation (TA=25°C) Total Power Dissipation Single Operation (TA=70°C) Operating Junction Temperature & Storage Temperature Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds. (Note 1) Parameter Value 30 7.3 20 Units V A A V W W °C °C ±20 2.5 1.6 - 55 ~ 150 300 Thermal Characteristics Symbol RθJA Parameter Thermal Resistance, Junction-to-Ambient (Note 4) Value Min. - Typ. - Max. Units °C/W January, 2003. Rev. 0. Copyright@Semi Well Semiconductor Co., Ltd., All rights...