SIM200D12SV3 Description
Preliminary SIM200D12SV3 VCES = 1200V Ic = 200A VCE(ON) typ. = 1.7V @ Ic = 200A “HALF-BRIDGE” IGBT MODULE.
SIM200D12SV3 Key Features
- rench gate + field stopper, using Infineon chip design
- 10µs Short circuit capability
- Low turn-off losses
- Short tail current for over 18KHz
- Positive VCE(on) temperature coefficient