SIM200D12SV3 - HALF-BRIDGE IGBT

SemiWell Semiconductor

Key Features

rench gate + field stopper, using Infineon chip design.
10µs Short circuit capability.
Low turn-off losses.
Short tail current for over 18KHz.
Positive VCE(on) temperature coefficient www. DataSheet4U. com.

SIM200D12SV3 half-bridge igbt by SemiWell Semiconductor - Datasheet Preview

Datasheet Details

Part number	SIM200D12SV3
Manufacturer	SemiWell Semiconductor
File Size	516.17 KB
Description	HALF-BRIDGE IGBT
Datasheet	SIM200D12SV3 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Preliminary SIM200D12SV3 VCES = 1200V Ic = 200A VCE(ON) typ. = 1.7V @ Ic = 200A “HALF-BRIDGE” IGBT MODULE Features ▪ rench gate + field stopper, using Infineon chip design ▪ 10µs Short circuit capability ▪ Low turn-off losses ▪ Short tail current for over 18KHz ▪ Positive VCE(on) temperature coefficient www.DataSheet4U.