2N3762L Datasheet | Semicoa Semiconductor

Data Sheet No. 2N3762L Type 2N3762L Geometry 6706 Polarity PNP Qual Level: JAN - JANTXV Features : - - - - General-purpose transistor for switching and amplifier applicatons. Housed in a TO-5 case. Also available in chip form using the 6706 chip geometry. The Min and Max limits shown are per MIL-PRF-19500/396 which Semicoa meets in all cases. Generic Part Number: 2N3762L REF: MIL-PRF-19500/396 TO-5 Maximum Ratings TC = 25 C unless otherwise specified o Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current, Continuous Operating Junction Temperature Storage Temperature Symbol VCEO VCBO VEBO IC TJ TSTG Rating 40 40 5.0 1.5 -55 to +200 -55 to +200 Unit V V V m A o C C o Data Sheet No. 2N3762L Electrical Characteristics TC = 25o C unless otherwise specified OFF Characteristics Collector-Base Breakdown Voltage IC = 10 µA Collector-Emitter Breakdown Voltage IC = 10 m A Emitter-Base Breakdown Voltage IE = 10 µA Collector-Emitter Cutoff Current VEB = 2.0 V, VCE = 20 V Collector-Emitter Cutoff Current VEB = 2.0 V, VCE = 20 V, TA = 150o C Collector-Base Cutoff Current VCB = 20 V Emitter-Base Cutoff Current VEB = 2.0 V Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICEX1 ICEX2 ICBO1...