2N5237 Datasheet | Semicoa Semiconductor

Data Sheet No. 2N5237 Type 2N5237 Geometry 3111 Polarity NPN Qual Level: JAN - JANTXV Features : - - - - Silicon power transistor for use in high speed switching applications. Housed in a TO-39 case. Also available in chip form using the 3111 chip geometry. The Min and Max limits shown are per MIL-PRF-19500/394 which Semicoa meets in all cases. Generic Part Number: 2N5237 REF: MIL-PRF-19500/394 TO-39 Maximum Ratings TC = 25o C unless otherwise specified Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current, Continuous Power Disipation TA = 25o C ambient Derate above 25o C Power Disipation TA = 25o C ambient Derate above 25o C Thermal Impedance Operating Junction Temperature Storage Temperature Symbol VCEO VCBO VEBO IC PT PT RJC RJA TJ TSTG Rating 120 150 10 10 1.0 5.7 5.0 50 0.020 0.175 -65 to +200 -65 to +200 Unit V V V A m W m W/o C Watt m W/o C o C/m W o C/m W o C C o Data Sheet No. 2N5237 Electrical Characteristics TC = 25 C unless otherwise specified o OFF Characteristics Collector-Base Breakdown Voltage IC = 10 µA Collector-Emitter Breakdown Voltage IC = 0.1 A, pulsed Emitter-Base Breakdown Voltage IE = 10 µA Collector-Emitter Cutoff Current VCE = 110 V VBE = 0.5 V, VCE = 150 V VBE = -0.5 V, VCE = 150 V, TC = +150o C Base-Emitter Cutoff Current VEB = 5 V Collector-Base Cutoff Current VCB = 80 V Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICEO1 ICEX ICEX2 IEBO...