SD3960 Datasheet | Semicoa Semiconductor

Features : 2N3960, 2N3960UB, SD3960F, SQ3960, SQ3960F Mechanical Specifications Metallization Bonding Pad Size Die Thickness Chip Area Top Surface Top Backside Emitter Base Al - 15 kÅ min. Au - 6.5 kÅ nom. 2.7 mils x 2.7 mils 2.7 mils x 2.7 mils 8 mils nominal 16 mils x 16 mils Silox Passivated Electrical Characteristics Parameter TA = 25o C Test conditions Min Max Unit BVCEO IC = 10.0 m A 12 --V dc BVCBO IC = 10 µA 20 --V dc BVEBO IE = 10.0 m A 4.5 --V dc ICEX VCE = 10 V, VEB = 2.0 V --5.0 n A h FE1 IC = 1.0 m A dc, VCE = 1.0 V 25 ----h FE2 IC = 10 m A dc, VCE = 1.0 V 40 400 --h FE3 IC = 30 m A dc, VCE = 1.0 V 25 ----VCE(sat) IC = 30 m A dc, IB = 3.0 m A --0.3 V dc Due to limitations of probe testing, only dc parameters are tested. This must be done with pulse width less than 300 µs, duty cycle less than 2%. Data Sheet 4 U...