SQ2857F
Features
: ft = 1.2 GHz (typ) at 5 m A/6V
Mechanical Specifications
Metallization Bonding Pad Size Die Thickness Chip Area Top Surface Top Backside Emitter Base Al
- 15 kÅ min. Au
- 6.5 kÅ nom. 2.3 mils x 2.3 mils 2.3 mils x 2.3 mils 8 mils nominal 16 mils x 16 mils Silox Passivated
Electrical Characteristics
TA = 25o C
Parameter
BVCEO BVCBO BVEBO ICBO
Test conditions
IC = 3.0 m A IC = 1.0 µA IE = 10 µA VCB = 15 V
Min
15 30 2.5 ---
Max
------0.01
Unit
V dc V dc V dc µA dc h FE IC = 3.0 m A dc, VCE = 1.0 V 30 150 --Due to limitations of probe testing, only dc parameters are tested. This must be done with pulse width of less than 300 µs, duty cycle less than...
