Semiconductor Technology MTH15N40
High Voltage Power MOSFET
| Part No. | MTH15N40 |
|---|---|
| Datasheet | MTH15N40 Download |
| Manufacturer | Semiconductor Technology |
| Description | High Voltage Power MOSFET |
| Buy | Stock & Price |
ELECTRICAL CHARACTERISTICS
TA @ 25° C Parameters Symbol Test Conditions Drain Source BVDSS ID = 0.25mA VGS = 0 Breakdown Voltage Gate Threshold Voltage VGS(th) ID = 1.0mA VDS = VGS ID = 1.0mA VDS = VGS TJ = 100°C Gate – Body Leakage IGSS VGS = 20V VDS = 0 Current Zero Gate Voltage IDSS VDS = 400V VGS = 0 Drain Current VDS = 320V VGS = 0 TJ = 125ºC On State Drain Current ID(on) Drain Source OnResistance Forward Transconductance Drain-Source On Voltage Drain-Source-On Voltage Input Capacitance Output Capacitance Reverse Transfer Capacitance rDS(on) gFS VDS(on) VDS(on) Ciss Coss Crss VDS = 25V VGS = 0 f = 1.0MHZ ID =8.0A VGS = 10V ID = 8.0A VDS = 10V ID = 15.0A VGS = 10V ID = 8.0A VGS = 10V TJ = 100ºC Min 400 2.0 1.5 Typ Max Unit Vdc Vdc nA mA mA Adc Ohms mhos 4.5 4.0 100 0.2 1.0 0.3 5.0 4.5 3.5 Vdc Vdc 3000 500 200 pF pF pF Page 1 of 2 TYPE: MTH15N40 Drain Source Diode Characteristics Forward On Voltage IS = 15.0A VGS = 0 IS = 15.0A Reverse Recovery Time Reverse Recovery Charge Total Gat...