Semikron International SEMIX191KD16S
Rectifier Diode
FEATURES
Terminal height 17 mm Chips soldered directly to isolated substrate TypicalAPPLICATIONS
*● Input Bridge Rectifier for AC/DC motor control
● Power supply
ABSOLUTE MAXIMUM RATINGS
Symbol Conditions Recitifier Diode IFAV sin. 180° IFSM 10 ms i2t 10 ms VRSM VRRM Tj Module Tstg Visol AC sinus 50Hz Tc = 85 °C Tc = 100 °C Tj = 25 °C Tj = 130 °C Tj = 25 °C Tj = 130 °C 1 min 1s Characteristics Symbol Conditions Diode VF V(TO) rT IRD Rth(j-c) Tj = 25 °C, IF = 500 A Tj = 130 °C Tj = 130 °C Tj = 130 °C, VRD = VRRM per diode Rth(j-c) sin. 180 per diode Module Rth(c-s) Ms Mt a w per chip per module to heat sink (M5) to terminals (M6) Values 190 145 6000 5000 180000 125000 1700 1600 -40 ... 130 -40 ... 125 4000 4800 Unit A A A A A²s A²s V V °C °C V V min. typ. max. Unit 1.5 V 0.85 V 0.95 m 12 mA K/W K/W 0.18 K/W K/W K/W 0.075 K/W 3 5 Nm 2.5 5 Nm 5 * 9,81 m/s² 145 g KD © by SEMIKRON Rev. 2 – 13.12.2012 1 SEMiX191KD16s Fig. 1L: Power dissipation per thyristor/diode vs. on-state current Fig. 1R: Power dissipation per thyristor/diode vs. ambient temperature Fig.