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SEMIX302KD16S - Rectifier Diode Module

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Overview

SEMiX302KD16s Absolute Maximum Ratings Symbol IFAV IFSM i2t Conditions Tc = 85 °C Tc = 100 °C Tj = 25 °C Tj = 130 °C Tj = 25 °C Tj = 130 °C Values 300 240 8500 7500 361000 281000 1700 1600 -40 ...

130 -40 ...

125 Unit A A A A A2s A2s V V °C °C V V Recitifier Diode sin.

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Key Features

  • Terminal height 17 mm.
  • Chips soldered directly to isolated substrate Characteristics Symbol Diode VF V(TO) rT IRD Rth(j-c) Rth(j-c) Module Rth(c-s) Ms Mt a w 250 per chip per module to heat sink (M5) to terminals (M6) 3 2.5 0.045 5 5 5.
  • 9,81 K/W K/W Nm Nm m/s2 g Tj = 25 °C, IF = 900 A Tj = 130 °C Tj = 130 °C Tj = 130 °C, VRD = VRRM per diode per diode 0.091 1.6 0.85 1.1 15 V V mΩ mA K/W K/W sin. 180 K/W K/W Conditions min. typ. max. Unit Typical.

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