SEMIX453GD176HDC
Features
- Homogeneous Si
- Trench = Trenchgate technology
- VCE(sat) with positive temperature coefficient
- UL recognised file no. E63532
Typical Applications-
- AC inverter drives
- UPS
- Electronic welders
Absolute Maximum Ratings
Symbol Conditions
IGBT
VCES IC
Tj = 150 °C
Tc = 25 °C Tc = 80 °C
ICnom ICRM VGES tpsc
Tj
ICRM = 2x ICnom
VCC = 1000 V VGE ≤ 20 V VCES ≤ 1700 V
Tj = 125 °C
Inverse diode
Tj = 150 °C
Tc = 25 °C Tc = 80 °C
IFnom IFRM IFSM Tj
IFRM = 2x IFnom tp = 10 ms, sin 180°, Tj = 25 °C
Module
It(RMS) Tstg Visol
AC sinus 50Hz, t = 1 min
Characteristics
Symbol Conditions
IGBT VCE(sat)
VCE0 r CE
VGE(th) ICES
Cies Coes Cres QG RGint td(on) tr Eon td(off) tf
IC = 300 A VGE = 15 V chiplevel
Tj = 25 °C Tj = 125 °C
Tj = 25 °C
Tj = 125 °C
VGE = 15...
