SEMiX101GD12Vs Overview
20 Tj = 125 °C 10 -40 ... 175 Tterminal = 80 °C AC sinus 50Hz, t = 1 min 600 -40 ... 125 4000 V A A A A V µs °C A A A A A °C A °C V Conditions Values Unit SEMiX® 13 VGES tpsc Tj IF IFnom Inverse diode SEMiX101GD12Vs.
SEMiX101GD12Vs Key Features
- Homogeneous Si
- VCE(sat) with positive temperature coefficient
- High short circuit capability
- UL recognised file no. E63532