Full PDF Text Transcription for SEMiX202GB12E4s (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
SEMiX202GB12E4s. For precise diagrams, and layout, please refer to the original PDF.
SEMiX202GB12E4s SEMiX® 2s Trench IGBT Modules SEMiX202GB12E4s Features • Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with positive temperature coefficient ...
View more extracted text
renchgate technology • VCE(sat) with positive temperature coefficient • High short circuit capability • UL recognized, file no. E63532 Typical Applications* • AC inverter drives • UPS • Electronic Welding Remarks • Case temperature limited to TC=125°C max.