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SEMiX291D16s - Bridge Rectifier Module

Features

  • Terminal height 17 mm.
  • Chips soldered directly to isolated substrate.
  • UL recognised file no. E63532 4000 4800 Characteristics Symbol Diode VF V(TO) rT IRD Rth(j-c) Module Rth(c-s) Ms Mt a w per chip per module to heat sink (M5) to terminals (M6) 3 2.5 0.04 5 5 5.
  • 9,81 350 K/W K/W Nm Nm m/s² g Tj = 25 °C, IF = 231 A Tj = 130 °C Tj = 130 °C Tj = 130 °C, VRD = VRRM sin. 180 per diode 2.09 0.83 4.6 1.1 0.45 V V mΩ mA K/W K/W Conditions min. typ. max. Unit Typ.

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Datasheet Details

Part number SEMiX291D16s
Manufacturer Semikron International
File Size 236.03 KB
Description Bridge Rectifier Module
Datasheet download datasheet SEMiX291D16s Datasheet

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Full PDF Text Transcription

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SEMiX291D16s Absolute Maximum Ratings Symbol ID IFSM i2t Conditions Tj = 150 °C sinus 180° 10 ms 10 ms Tc = 85 °C Tc = 100 °C Tj = 25 °C Tj = 130 °C Tj = 25 °C Tj = 130 °C Values 232 196 1600 1380 12800 9522 1700 1600 -40 ... 150 -40 ... 125 Unit A A A A A²s A²s V V °C °C V V Recitifier Diode SEMiX® 13 VRSM VRRM Tj Module Tstg Visol AC sinus 50Hz 1 min 1s Bridge Rectifier Module (uncontrolled) SEMiX291D16s Features • Terminal height 17 mm • Chips soldered directly to isolated substrate • UL recognised file no. E63532 4000 4800 Characteristics Symbol Diode VF V(TO) rT IRD Rth(j-c) Module Rth(c-s) Ms Mt a w per chip per module to heat sink (M5) to terminals (M6) 3 2.5 0.
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