Datasheet4U Logo Datasheet4U.com

SKM150GB12V - IGBT

Key Features

  • V-IGBT = 6. Generation Trench V-IGBT (Fuji).
  • CAL4 = Soft switching 4. Generation CAL-diode.
  • Insulated copper baseplate using DBC technology (Direct Copper Bonding).
  • Increased power cycling capability.
  • With integrated gate resistor.
  • UL recognized, file no. E63532.
  • Lowest switching losses at High di/dt Typical.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
SKM150GB12F4 IGBT Semikron
SKM150GB12F4G IGBT Semikron
SKM150GB17E4 IGBT Semikron
SKM150GB17E4G IGBT Semikron
SKM150GB17E4GH16 IGBT Semikron

Other Datasheets by Semikron Danfoss

Part Number Description
SKM150GB12VG IGBT
SKM150GB123D IGBT
SKM150GB124D IGBT
SKM150GB128D IGBT
SKM150GB12T4 IGBT

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SKM150GB12V SEMITRANS® 2 SKM150GB12V Features • V-IGBT = 6. Generation Trench V-IGBT (Fuji) • CAL4 = Soft switching 4. Generation CAL-diode • Insulated copper baseplate using DBC technology (Direct Copper Bonding) • Increased power cycling capability • With integrated gate resistor • UL recognized, file no. E63532 • Lowest switching losses at High di/dt Typical Applications* • AC inverter drives • UPS • Electronic welders Remarks • Case temperature limited to Tc = 125°C max. • Recommended Top = -40 ...