SKM195GAL123D Overview
Ratings Symbol Conditions 1) VCES VCGR IC ICM VGES Ptot Tj, (Tstg) Visol humidity climate RGE = 20 kΩ Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. DIN 40 040 DIN IEC 68 T.1 Inverse Diode IF= IC Tcase = 25/80 °C IFM= ICM Tcase = 25/80 °C;.
SKM195GAL123D Key Features
- MOS input (voltage controlled)
- N channel, Homogeneous Si
- Very low tail current with low
- High short circuit capability
- Latch-up free
- Fast & soft inverse CAL
- Isolated copper baseplate
- Large clearance (13 mm) and creepage distances (20 mm)
SKM195GAL123D Applications
- Switching (not for linear use)