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SKM200GAR12E4 - IGBT

Key Features

  • IGBT4 = 4. generation medium fast trench IGBT (Infineon).
  • CAL4 = Soft switching 4. generation CAL-diode.
  • Isolated copper baseplate using DBC technology (Direct Bonded Copper).
  • Increased power cycling capability.
  • With integrated gate resistor.
  • For higher switching frequenzies up to 12kHz.
  • UL recognized, file no. E63532 VGES tpsc Tj IF IFnom IFRM IFSM Tj Inverse diode Tj = 175 °C Freewheeling diode IF IFnom IFRM IFSM Tj Module It(R.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SKM200GAR12E4 Absolute Maximum Ratings Symbol IGBT VCES IC ICnom ICRM ICRM = 3xICnom VCC = 800 V VGE ≤ 15 V VCES ≤ 1200 V Tj = 25 °C Tj = 175 °C Tc = 25 °C Tc = 80 °C 1200 313 241 200 600 -20 ... 20 Tj = 150 °C 10 -40 ... 175 Tc = 25 °C Tc = 80 °C 229 172 200 IFRM = 3xIFnom tp = 10 ms, sin 180°, Tj = 25 °C 600 990 -40 ... 175 Tc = 25 °C Tc = 80 °C 229 172 200 IFRM = 3xIFnom tp = 10 ms, sin 180°, Tj = 25 °C 600 990 -40 ... 175 Tterminal = 80 °C AC sinus 50 Hz, t = 1 min 500 -40 ... 125 4000 V A A A A V µs °C A A A A A °C A A A A A °C A °C V Conditions Values Unit SEMITRANS® 3 IGBT4 Modules SKM200GAR12E4 Features • IGBT4 = 4. generation medium fast trench IGBT (Infineon) • CAL4 = Soft switching 4.