SKM200GAR12E4
SKM200GAR12E4 is IGBT manufactured by Semikron Danfoss.
Features
- IGBT4 = 4. generation medium fast trench IGBT (Infineon)
- CAL4 = Soft switching 4. generation CAL-diode
- Isolated copper baseplate using DBC technology (Direct Bonded Copper)
- Increased power cycling capability
- With integrated gate resistor
- For higher switching frequenzies up to 12k Hz
- UL recognized, file no. E63532
VGES tpsc Tj IF IFnom IFRM IFSM Tj
Inverse diode Tj = 175 °C
Freewheeling diode IF IFnom IFRM IFSM Tj Module It(RMS) Tstg Visol Tj = 175 °C
Typical Applications-
- DC/DC
- converter
- Brake chopper
- Switched reluctance motor
Remarks
- Case temperature limited to Tc = 125°C max.
- Remended Top = -40 ... +150°C
- Product reliability results valid for Tj = 150°C
Characteristics Symbol
IGBT VCE(sat) VCE0 r CE VGE(th) ICES Cies Coes Cres QG RGint
Conditions
IC = 200 A VGE = 15 V chiplevel chiplevel VGE = 15 V chiplevel VGE = 0 V VCE = 1200 V VCE = 25 V VGE = 0 V VGE =
- 8 V...+ 15 V Tj = 25 °C Tj = 25 °C Tj = 150 °C Tj = 25 °C Tj = 150 °C Tj = 25 °C Tj = 150 °C min. typ.
1.80 2.20 0.8 0.7 5.00 7.50 max.
2.05 2.40 0.9 0.8 5.75 8.00 6.5 2.7
Unit
V V V V m m V m A m A n F n F n F n C
VGE=VCE, IC = 7.6 m A Tj = 25 °C Tj = 150 °C f = 1 MHz f = 1 MHz f = 1 MHz
12.3 0.81 0.69 1130 3.8
GAR © by SEMIKRON Rev. 1
- 21.08.2013 1
Characteristics Symbol td(on) tr Eon td(off) tf Eoff Rth(j-c) VCC = 600 V IC = 200 A VGE = ±15 V RG on = 1 RG off = 1 di/dton = 5500 A/µs di/dtoff = 2300 A/µs per IGBT Tj = 25 °C Tj = 150 °C Tj = 25 °C Tj = 150 °C Tj = 25 °C 2.20 2.15 1.3 0.9 4.5 6.3 174 33 13 0.26 2.20 2.15 1.3 0.9 4.5 6.3 174 33.1 13 0.26 15 terminal-chip per module to heat sink M6 to terminals M6 3 2.5 TC = 25 °C TC = 125 °C 0.25 0.5 0.02 0.038 5 5 325 20 2.52 2.47 1.5 1.1 5.1 6.8
Conditions min.
Tj = 150 °C Tj = 150 °C Tj = 150 °C Tj = 150 °C Tj = 150 °C Tj = 150 °C typ.
204 40 21 490 107 27 max.
Unit ns ns m J ns ns m...
