SKM300GBD12T4
SKM300GBD12T4 is IGBT manufactured by Semikron Danfoss.
Features
- IGBT4 = 4. generation fast trench IGBT (Infineon)
- CAL4 = Soft switching 4. generation CAL-diode
- Isolated copper baseplate using DBC technology (Direct Bonded Copper)
- Increased power cycling capability
- With integrated gate resistor
- For higher switching frequenzies up to 20k Hz
- UL recognized, file no. E63532
VGES tpsc Tj IF IFnom IFRM IFSM Tj
Inverse diode Tj = 175 °C
Freewheeling diode IF IFnom IFRM IFSM Tj Module It(RMS) Tstg Visol Tj = 175 °C
Typical Applications-
- Current source inverter
Remarks
- The Fig.1 to Fig.9 are based on measurements of the SKM300GB12T4
- The series diodes (FWD) have the data of the inverse diodes of SKM400GB12T4
- Case temperature limited to Tc = 125°C max, rem. Top = -40 ... +150°C, product rel. results valid for Tj = 150°
Characteristics Symbol
IGBT VCE(sat) VCE0 r CE VGE(th) ICES Cies Coes Cres QG RGint
Conditions
IC = 300 A VGE = 15 V chiplevel chiplevel VGE = 15 V chiplevel VGE = 0 V VCE = 1200 V VCE = 25 V VGE = 0 V VGE =
- 8 V...+ 15 V Tj = 25 °C Tj = 25 °C Tj = 150 °C Tj = 25 °C Tj = 150 °C Tj = 25 °C Tj = 150 °C min. typ.
1.85 2.25 0.8 0.7 3.50 5.17 max.
2.10 2.45 0.9 0.8 4.00 5.50 6.5 4.0
Unit
V V V V m m V m A m A n F n F n F n C
VGE=VCE, IC = 12 m A Tj = 25 °C Tj = 150 °C f = 1 MHz f = 1 MHz f = 1 MHz
18.6 1.16 1.02 1700 2.5
GBD © by SEMIKRON Rev. 3
- 03.09.2013 1
Characteristics Symbol td(on) tr Eon td(off) tf Eoff Rth(j-c) VCC = 600 V IC = 300 A VGE = ±15 V RG on = 1.5 RG off = 1.5 di/dton = 7500 A/µs di/dtoff = 3350 A/µs per IGBT Tj = 25 °C Tj = 150 °C Tj = 25 °C Tj = 150 °C Tj = 25 °C 2.41 2.45 1.3 0.9 22.2 31.0
Conditions min.
Tj = 150 °C Tj = 150 °C Tj = 150 °C Tj = 150 °C Tj = 150 °C Tj = 150 °C typ.
200 44 27 450 90 29 max.
Unit ns ns m J ns ns m J
SEMITRANS® 3
Fast IGBT4 Modules
SKM300GBD12T4...
