Datasheet4U Logo Datasheet4U.com

SKM400GB176DL3 - IGBT

Features

  • br>.
  • Trench = Trenchgate technology.
  • VCE(sat) with positive temperature coefficient.
  • High short circuit capability, self limiting to 6 x Icnom.
  • Insulated copper baseplate using aluminum nitride ceramic.
  • Large clearance (13mm) and creepage distance (20mm), to ground: 50mm Typical.

📥 Download Datasheet

Datasheet preview – SKM400GB176DL3

Datasheet Details

Part number SKM400GB176DL3
Manufacturer Semikron International
File Size 603.54 KB
Description IGBT
Datasheet download datasheet SKM400GB176DL3 Datasheet
Additional preview pages of the SKM400GB176DL3 datasheet.

📁 Similar Datasheet

Other Datasheets by Semikron International

Full PDF Text Transcription

Click to expand full text
SKM400GB176DL3 SEMITRANS™ 9 Trench IGBT Modules SKM400GB176DL3 Features* • Trench = Trenchgate technology • VCE(sat) with positive temperature coefficient • High short circuit capability, self limiting to 6 x Icnom • Insulated copper baseplate using aluminum nitride ceramic • Large clearance (13mm) and creepage distance (20mm), to ground: 50mm Typical Applications • AC inverter drives • Mains 575 – 750 V AC • Public transport • Wind power Remarks • Terminals 1,4 – 2,5 – 3,6 need to be connected externally Absolute Maximum Ratings Symbol Conditions IGBT VCES IC Tj = 25 °C Tj = 150 °C Tc = 25 °C Tc = 80 °C ICnom ICRM VGES tpsc Tj VCC = 1000 V VGE ≤ 20 V VCES ≤ 1700 V Tj = 125 °C Inverse diode IF Tj = 150 °C Tc = 25 °C Tc = 80 °C IFRM IFSM tp = 10 ms, sin 180°, Tj = 25 °C Tj
Published: |