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SKM50GB12V - IGBT

Features

  • V-IGBT = 6. Generation Trench V-IGBT (Fuji).
  • CAL4 = Soft switching 4. Generation CAL-diode.
  • Insulated copper baseplate using DBC technology (Direct Copper Bonding).
  • Increased power cycling capability.
  • With integrated gate resistor.
  • UL recognized, file no. E63532.
  • Lowest switching losses at High di/dt Typical.

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Datasheet Details

Part number SKM50GB12V
Manufacturer Semikron International
File Size 277.16 KB
Description IGBT
Datasheet download datasheet SKM50GB12V Datasheet
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SKM50GB12V SEMITRANS® 2 SKM50GB12V Target Data Features • V-IGBT = 6. Generation Trench V-IGBT (Fuji) • CAL4 = Soft switching 4. Generation CAL-diode • Insulated copper baseplate using DBC technology (Direct Copper Bonding) • Increased power cycling capability • With integrated gate resistor • UL recognized, file no. E63532 • Lowest switching losses at High di/dt Typical Applications* • AC inverter drives • UPS • Electronic welders Remarks • Case temperature limited to Tc = 125°C max. • Recommended Top = -40 ...
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