SKM50GB12V Description
SKM50GB12V SEMITRANS® 2 SKM50GB12V Target Data.
SKM50GB12V Key Features
- V-IGBT = 6. Generation Trench V-IGBT (Fuji)
- CAL4 = Soft switching 4. Generation CAL-diode
- Insulated copper baseplate using DBC technology (Direct Copper Bonding)
- Increased power cycling capability
- With integrated gate resistor
- UL recognized, file no. E63532
- Lowest switching losses at High di/dt