SKM900GA12E4 Description
20 Tj = 150 °C 10 -40 ... 175 Tterminal = 80 °C AC sinus 50 Hz, t = 1 min 500 -40 ... 125 4000 V A A A A V µs °C A A A A A °C A °C V Conditions Values Unit SEMITRANS® 4 IGBT4 Modules SKM900GA12E4 Target Data.
SKM900GA12E4 Key Features
- IGBT4 = 4. Generation Medium Trench IGBT (Infineon)
- CAL4 = Soft switching 4. Generation CAL-Diode
- Isolated copper baseplate using DBC Technology (Direct Copper Bonding)
- UL recognized, file no. E63532
- Increased power cycling capability
- With integrated Gate resistor
- For switching frequenzies up to 12kHz