SKM900GA12E4 Datasheet | Semikron Danfoss

Features - IGBT4 = 4. Generation Medium Trench IGBT (Infineon) - CAL4 = Soft switching 4. Generation CAL-Diode - Isolated copper baseplate using DBC Technology (Direct Copper Bonding) - UL recognized, file no. E63532 - Increased power cycling capability - With integrated Gate resistor - For switching frequenzies up to 12k Hz VGES tpsc Tj IF IFnom IFRM IFSM Tj Module It(RMS) Tstg Visol Inverse diode Tj = 175 °C Characteristics Symbol IGBT VCE(sat) VCE0 r CE VGE(th) ICES Cies Coes Cres QG RGint td(on) tr Eon td(off) tf Eoff Rth(j-c) Typical Applications- - - - - AC inverter drives UPS Electronic welders Switched reluctance motor Conditions IC = 900 A VGE = 15 V chiplevel chiplevel VGE = 15 V chiplevel VGE = 0 V VCE = 1200 V VCE = 25 V VGE = 0 V VGE = - 8 V...+ 15 V Tj = 25 °C VCC = 600 V IC = 900 A VGE = ±15 V RG on = 0.5  RG off = 0.5  di/dton = 9000 A/µs di/dtoff = 4500 A/µs per IGBT Tj = 150 °C Tj = 150 °C Tj = 150 °C Tj = 150 °C Tj = 150 °C Tj = 150 °C Tj = 25 °C Tj = 150 °C Tj = 25 °C Tj = 150 °C Tj = 25 °C Tj = 150 °C min. typ. 1.83 2.23 0.8 0.7 1.14 1.70 max. 2.08 2.44 0.9 0.8 1.31 1.82 6.5 0.3 Unit V V V V m m V m A m A n F n F n F n C  ns ns m J ns ns m J Remarks - Case temperature limited to Tc = 125°C max, rem. Top = -40 ... +150°C, product rel. results valid for Tj = 150° VGE=VCE, IC = 32.8 m A Tj = 25 °C Tj = 150 °C f = 1 MHz f = 1 MHz f = 1 MHz 5.8 0.1 54.4 3.52 3 5100 0.94 200 100 80 620 110 115 K/W GA © by SEMIKRON Rev. 1 - 15.08.2012 1 Characteristics Symbol Conditions Tj = 25 °C Tj = 150 °C Tj = 25 °C Tj = 150 °C Tj = 25 °C min. typ. 2.31 2.31 1.3 0.9 1.1 1.6 850 140 65 max. 2.65 2.64 1.5 1.1 1.3 1.7 Unit V V V V m m A µC m J Inverse diode VF = VEC IF = 900 A VGE = 0 V chiplevel VF0 chiplevel r F chiplevel SEMITRANS® 4 IGBT4...