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SKM900GA12E4 Datasheet IGBT

Manufacturer: Semikron Danfoss

Overview: SKM900GA12E4 Absolute Maximum Ratings Symbol IGBT VCES IC ICnom ICRM ICRM = 3xICnom VCC = 800 V VGE ≤ 15 V VCES ≤ 1200 V Tj = 25 °C Tj = 175 °C Tc = 25 °C Tc = 80 °C 1200 1305 1003 900 2700 -20 ... 20 Tj = 150 °C 10 -40 ... 175 Tc = 25 °C Tc = 80 °C 871 651 800 IFRM = 3xIFnom tp = 10 ms, sin 180°, Tj = 25 °C 2400 3520 -40 ... 175 Tterminal = 80 °C AC sinus 50 Hz, t = 1 min 500 -40 ...

Key Features

  • IGBT4 = 4. Generation Medium Trench IGBT (Infineon).
  • CAL4 = Soft switching 4. Generation CAL-Diode.
  • Isolated copper baseplate using DBC Technology (Direct Copper Bonding).
  • UL recognized, file no. E63532.
  • Increased power cycling capability.
  • With integrated Gate resistor.
  • For switching frequenzies up to 12kHz VGES tpsc Tj IF IFnom IFRM IFSM Tj Module It(RMS) Tstg Visol Inverse diode Tj = 175 °C Characteristics Symbol IGBT VCE(sat).

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