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SKM900GA12E4
Absolute Maximum Ratings Symbol
IGBT VCES IC ICnom ICRM ICRM = 3xICnom VCC = 800 V VGE ≤ 15 V VCES ≤ 1200 V Tj = 25 °C Tj = 175 °C Tc = 25 °C Tc = 80 °C 1200 1305 1003 900 2700 -20 ... 20 Tj = 150 °C 10 -40 ... 175 Tc = 25 °C Tc = 80 °C 871 651 800 IFRM = 3xIFnom tp = 10 ms, sin 180°, Tj = 25 °C 2400 3520 -40 ... 175 Tterminal = 80 °C AC sinus 50 Hz, t = 1 min 500 -40 ... 125 4000 V A A A A V µs °C A A A A A °C A °C V
Conditions
Values
Unit
SEMITRANS® 4
IGBT4 Modules
SKM900GA12E4 Target Data Features
• IGBT4 = 4. Generation Medium Trench IGBT (Infineon) • CAL4 = Soft switching 4. Generation CAL-Diode • Isolated copper baseplate using DBC Technology (Direct Copper Bonding) • UL recognized, file no.
SKM900GA12E4 Datasheet
