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SKiM306GD12E4 - IGBT

Datasheet Summary

Features

  • IGBT 4 Trench Gate Technology.
  • Solderless sinter technology.
  • VCE(sat) with positive temperature coefficient.
  • Low inductance case.
  • Insulated by Al2O3 DBC (Direct Bonded Copper) ceramic substrate.
  • Pressure contact technology for thermal contacts.
  • Spring contact system to attach driver PCB to the control terminals.
  • High short circuit capability, self limiting to 6 x IC.
  • Integrated temperature sensor Typical Applicatio.

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Datasheet Details

Part number SKiM306GD12E4
Manufacturer Semikron International
File Size 551.16 KB
Description IGBT
Datasheet download datasheet SKiM306GD12E4 Datasheet
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SKiM306GD12E4 SKiM® 63 Trench IGBT Modules SKiM306GD12E4 Features • IGBT 4 Trench Gate Technology • Solderless sinter technology • VCE(sat) with positive temperature coefficient • Low inductance case • Insulated by Al2O3 DBC (Direct Bonded Copper) ceramic substrate • Pressure contact technology for thermal contacts • Spring contact system to attach driver PCB to the control terminals • High short circuit capability, self limiting to 6 x IC • Integrated temperature sensor Typical Applications* • Automotive inverter • High reliability AC inverter wind • High reliability AC inverter drives Remarks • Case temperature limited to Ts = 125°C max; Tc = Ts (for baseplateless modules) • Recommended Top = -40 … +150°C GD © by SEMIKRON Absolute Maximum Ratings Symbol Conditions Inverter - IGBT VC
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