Semikron F1200G
High efficiency fast silicion rectifier diode
FEATURES
!"#$MECHANICAL DATA
% &'( ) * + , -'( , . / 0 $1.2$&( , 3 1 4 , , ( - 1) # ' 4 / - 2) 05 6 ( 7' .8 6 ( 3) .7 6 ( 4) . 8 9 5) 8 .8 : /3 9 2 ;ABSOLUTE MAXIMUM RATINGS
.7 6 ( ' ; Symbol Conditions Values Units 057# = , ; ' <$ ' .7 6 ( -? - 7 05< < = 4 ; B -( CD-? % 7 051 4 ; , ( CD $; = E? ( 7 F < , ,' G - E? - 7F < 7 8 / -? H9+ < 8 "? '( H9+ .8 I , 8 $ ( J -&( K.8 : /3 (?? . 1 , $ ( J -&( Characteristics Symbol Conditions .7 6 ( ' ; Values Units 0< 4 , ' .8 6 ( L #< 6 #<< G ( M7 .8 6 L #< 6 #<< N .3 8 K CD = = , #? $ 5 O Q<1 < = = 3 , K < 6 #L 05 6 7L 059 6 79 ? R = 4 = = ,3 K0< 6 7L .8 6 L = ; ? $ P $ N Dimensions in mm % &'( ) * 1 18-01-2011 MAM © by SEMIKRON F 1200A ... F 1200G Fig. 1 Forward characteristic (typical value)1) Fig. 2 Rated forward current vs. temp. of the terminals 1) Fig. 3 Pulse thermal resistance vs. pulse duration 1) Fig. 4 Thermal resistance versus distance from case 2 18-01-2011 MAM © by SEMIKRON