SEMIX303GD12VC Description
20 Tj = 125 °C 10 -40 ... 175 Tterminal = 80 °C AC sinus 50Hz, t = 1 min 600 -40 ... 125 4000 V A A A A V µs °C A A A A A °C A °C V Conditions Values Unit SEMiX® 33c VGES tpsc Tj IF IFnom Inverse diode SEMiX303GD12Vc.
SEMIX303GD12VC Key Features
- Homogeneous Si
- VCE(sat) with positive temperature coefficient
- High short circuit capability
- UL recognised file no. E63532