Semikron SEMiX156GD12T4p
IGBT
| Part No. | SEMiX156GD12T4p |
|---|---|
| Datasheet | SEMiX156GD12T4p Download |
| Manufacturer |  Semikron |
| Description | IGBT |
| Buy | Stock & Price |
FEATURES
*● Press Fit
● Homogeneous Si
● Trench = Trenchgate technology
● VCE(sat) with positive temperature coefficient
● High short circuit capability
● UL recognised file no. E63532 Typical
APPLICATIONS
● AC inverter drives● UPS
● Electronic Welding Remarks
● Case temperature limited to TC=125°C max.
● Visol between temperature sensor and power section is only 2500V
● Product reliability results valid for Tj ≤ 150°C (recommended Tjop= -40 ... 150°C)
ABSOLUTE MAXIMUM RATINGS
Symbol Conditions IGBT VCES IC Tj = 25 °C Tj = 175 °C Tc = 25 °C Tc = 80 °C ICnom ICRM VGES tpsc Tj ICRM = 3 x ICnom VCC = 800 V VGE ≤ 20 V VCES ≤ 1200 V Tj = 150 °C Inverse diode VRRM IF Tj = 25 °C Tj = 175 °C Tc = 25 °C Tc = 80 °C IFnom IFRM IFSM Tj IFRM = 2xIFnom tp = 10 ms, sin 180°, Tj = 25 °C Module It(RMS) Tstg Visol per connector pin AC sinus 50Hz, t = 1 min Characteristics Symbol Conditions IGBT VCE(sat) VCE0 rCE VGE(th) ICES Cies Coes Cres QG RGint td(on) tr Eon td(off) tf Eoff Rth(j-c) Rth(c-s) IC = 1...
