SEMiX205GD12E4
SEMiX205GD12E4 is IGBT manufactured by Semikron Danfoss.
Features
- Solderless assembly solution with Press FIT signal pins and screw power terminals
- IGBT 4 Trench Gate Technology
- VCE(sat) with positive temperature coefficient
- Low inductance case
- Reliable mechanical design with injection moulded terminals and robust internal connections
- UL recognized file no. E63532
- NTC temperature sensor inside
Typical Applications-
- AC inverter drives
- UPS
- Electronic Welding
Remarks
- Product reliability results are valid for Tjop=150°C
- Please refere to SEMi X®5 Technical Explanations for mounting conditions
- For storage and case temperature with TIM see document “TP(HALA P8) SEMi X 5p”
GD © by SEMIKRON
Absolute Maximum Ratings
Symbol Conditions
IGBT
VCES IC
Tj = 25 °C Tj = 175 °C
Tc = 25 °C Tc = 80 °C
ICnom ICRM VGES tpsc
Tj
ICRM = 3x ICnom VCC = 800 V VGE ≤ 15 V VCES ≤ 1200 V
Tj = 150 °C
Inverse diode
VRRM IF
Tj = 25 °C Tj = 175 °C
Tc = 25 °C Tc = 80 °C
IFnom IFRM IFSM Tj
IFRM = 2x IFnom tp = 10 ms, sin 180°, Tj = 25 °C
Module
It(RMS) Tstg Visol module without TIM AC sinus 50Hz, t = 1 min
Characteristics
Symbol Conditions
IGBT VCE(sat)
VCE0 r CE
VGE(th) ICES Cies Coes Cres QG RGint td(on) tr Eon td(off)...
