SEMiX603GAL12E4p Description
SEMiX603GAL12E4p SEMiX® 3p Trench IGBT Modules SEMiX603GAL12E4p.
SEMiX603GAL12E4p Key Features
- Homogeneous Si
- Trench = Trenchgate technology
- VCE(sat) with positive temperature
- High short circuit capability
- Press-fit pins as auxiliary contacts
- Thermally optimized ceramic
- UL recognized, file no. E63532