SEMiX603GB12E4I25p Description
SEMiX603GB12E4I25p SEMiX® 3p shunt Trench IGBT Modules SEMiX603GB12E4I25p.
SEMiX603GB12E4I25p Key Features
- Homogeneous Si
- Trench = Trenchgate technology
- VCE(sat) with positive temperature
- High short circuit capability
- Press-fit pins as auxiliary contacts
- Thermally optimized ceramic
- Current sensing shunt resistor
- UL recognized, file no. E63532