SEMiX603GB17E4I30p Description
SEMiX603GB17E4I30p SEMiX® 3p shunt Trench IGBT Modules SEMiX603GB17E4I30p.
SEMiX603GB17E4I30p Key Features
- Homogeneous Si
- Trench = Trenchgate technology
- VCE(sat) with positive temperature
- High short circuit capability
- Press-fit pins as auxiliary contacts
- Current sensing shunt resistor
- UL recognized, file no. E63532