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SK100GD12T7ETE2 - IGBT

Key Features

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  • Low inductive design.
  • Press-Fit contact technology.
  • 1200V Generation 7 IGBT (T7).
  • Robust and soft switching CAL4F diode technology.
  • Integrated NTC temperature sensor.
  • UL recognized file no. E 63 532 Typical.

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SK100GD12T7ETE2 SEMITOP®E2 Sixpack Open Emitter Evaluation Sample SK100GD12T7ETE2 Target Data Features* • Low inductive design • Press-Fit contact technology • 1200V Generation 7 IGBT (T7) • Robust and soft switching CAL4F diode technology • Integrated NTC temperature sensor • UL recognized file no. E 63 532 Typical Applications • Motor drives • Servo drives • Air conditioning • Auxiliary Inverters • UPS Absolute Maximum Ratings Symbol Conditions IGBT 1 VCES IC IC ICnom ICRM VGES tpsc Tj Tj = 25 °C λpaste=0.8 W/(mK) Tj = 175 °C λpaste=2.5 W/(mK) Tj = 175 °C Ts = 25 °C Ts = 70 °C Ts = 25 °C Ts = 70 °C VCC = 800 V VGE ≤ 15 V VCES ≤ 1200 V Tj = 175 °C Absolute Maximum Ratings Symbol Conditions Diode 1 VRRM IF IF IFRM IFSM Tj Tj = 25 °C λpaste=0.8 W/(mK) Tj = 175 °C λpaste=2.