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SK225GH07H5TD1E2 - IGBT

Key Features

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  • Optimized design for superior thermal performances.
  • Low inductive design.
  • Press-Fit contact technology.
  • 650V Trench5 IGBT (H5).
  • Rapid switching diode technology.
  • Integrated NTC temperature sensor.
  • UL recognized file no. E 63 532 Typical.

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Full PDF Text Transcription (Reference)

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SK225GH07H5TD1E2 SEMITOP®E2 H-Bridge Engineering Sample SK225GH07H5TD1E2 Target Data Features* • Optimized design for superior thermal performances • Low inductive design • Press-Fit contact technology • 650V Trench5 IGBT (H5) • Rapid switching diode technology • Integrated NTC temperature sensor • UL recognized file no. E 63 532 Typical Applications • Electric Vehicle charging • Switched Mode Power Supply • Welding GH-T © by SEMIKRON Absolute Maximum Ratings Symbol Conditions Inverter - IGBT VCES IC IC ICnom ICRM VGES tpsc Tj Tj = 25 °C λpaste=0.8 W/(mK) Tj = 175 °C λpaste=2.5 W/(mK) Tj = 175 °C Ts = 25 °C Ts = 70 °C Ts = 25 °C Ts = 70 °C VCC = 360 V VGE ≤ 15 V VCES ≤ 650 V Tj = 150 °C Inverse - Diode IF λpaste=0.8 W/(mK) Ts = 25 °C Tj = 175 °C Ts = 70 °C IF λpaste=2.