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SK280MB10 - Half-Bridge MOSFET

Key Features

  • br>.
  • One screw mounting module.
  • Low inductive design.
  • Heat transfer and isolation through direct copper bonded aluminium oxide ceramic (DCB).
  • 100V Trench MOS technology.
  • UL recognized file no. E 63 532 Typical.

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SK280MB10 SEMITOP® 3 Half-Bridge (MOSFET module) SK280MB10 Features* • One screw mounting module • Low inductive design • Heat transfer and isolation through direct copper bonded aluminium oxide ceramic (DCB) • 100V Trench MOS technology • UL recognized file no. E 63 532 Typical Applications • Switched Mode Power Supplies Remarks Recommended driving for optimal switching performances: VGS=0/10V MB Absolute Maximum Ratings Symbol Conditions MOSFET 1 VDSS ID Tj = 175 °C IDM IDRM VGS Tj Integrated body diode IFM IFRM Ts = 25 °C Ts = 70 °C Absolute Maximum Ratings Symbol Conditions Module It(RMS) Tstg Visol ∆Tterminal at PCB joint = 30 K, per pin AC, sinusoidal, t = 1 min Values 100 335 280 960 320 -20 ... 20 -40 ... 175 960 320 Values 60 -40 ...