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SK30DGDL07E3ETE1 - IGBT

Key Features

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  • Optimized design for superior thermal performance.
  • Low inductive design.
  • Press-Fit contact technology.
  • 650V Trench IGBT3 (E3).
  • Robust and soft switching CAL4F diode technology.
  • PEP rectifier diode technology for enhanced power and environmental robustness.
  • Integrated NTC temperature sensor.
  • UL recognized file no. E 63 532 Typical.

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Full PDF Text Transcription (Reference)

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SK30DGDL07E3ETE1 SEMITOP®E1 3-phase Converter-Inverter-Brake (CIB) Engineering Sample SK30DGDL07E3ETE1 Target Data Features* • Optimized design for superior thermal performance • Low inductive design • Press-Fit contact technology • 650V Trench IGBT3 (E3) • Robust and soft switching CAL4F diode technology • PEP rectifier diode technology for enhanced power and environmental robustness • Integrated NTC temperature sensor • UL recognized file no. E 63 532 Typical Applications • Motor drives • Air conditioning • Auxiliary Inverters Remarks • Recommended Tj,op=-40 ...+150 °C Absolute Maximum Ratings Symbol Conditions Inverter - IGBT VCES IC Tj = 25 °C λpaste=0.8 W/(mK) Tj = 175 °C Ts = 25 °C Ts = 70 °C IC λpaste=2.