SKD75GAL123D
Features
- Round main terminals (2 mm∅)
- Easy drilling of PCB
- Input diodes glass passivated
- 1400 V PIV, good for 500 VAC
- High I2t rating (inrush current)
- IGBT is latch-up free, homogeneous silicon-structure
- High short circuit capability, self limiting to 6
- Icnom
- Fast & soft CAL diodes8)
- Isolated copper baseplate using DCB Direct Copper Bonding Technology
- Large clearance (9 mm) and creepage distances (13 mm). Typical Applications: Input rectifier bridge (B6U) with brake chopper for PWM inverter drives using SEMITRANS SKM 75GD123D
1) 2) 3) 8) 9)
VGE = 0 VCE = 25 V f = 1 MHz
VCC = 600 V VGE = + 15 V /
- 15 V 3) IC = 50 A, ind. load RGon = RGoff = 22 Ω Tj = 125 °C
Inverse Diode D78) of brake chopper VF = VEC IF = 15 A VGE = 0 V; VF = VEC IF = 25 A Tj = 25 (125) °C VTO Tj = 125 °C Tj = 125 °C r T IRRM IF = 15 A; Tj = 25 (125) °C2) Qrr IF = 15 A; Tj = 25 (125) °C2) FWD D8 of "GAL" brake chopper 8) VF = VEC IF = 25 A VGE = 0 V; VF =...
