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SKD75GAL123D - Igbt Modules

Key Features

  • Round main terminals (2 mm∅).
  • Easy drilling of PCB.
  • Input diodes glass passivated.
  • 1400 V PIV, good for 500 VAC.
  • High I2t rating (inrush current).
  • IGBT is latch-up free, homogeneous silicon-structure.
  • High short circuit capability, self limiting to 6.
  • Icnom.
  • Fast & soft CAL diodes8).
  • Isolated copper baseplate using DCB Direct Copper Bonding Technology.
  • Large clearance (9 mm) and creepage distances (13.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Absolute Maximum Ratings Symbol VCES VCGR IC ICM VGES Ptot Tj, (Tstg) Visol humidity climate Diodes 9) IF IFM= – ICM IFSM I2t Conditions 1) RGE = 20 kΩ Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms per IGBT/D1/D8, Tcase=25 °C AC, 1 min. DIN 40 040 DIN IEC 68 T.1 Tcase = 80 °C Tcase = 80 °C; tp = 1 ms tp = 10 ms; sin.; Tj = 150 °C tp = 10 ms; Tj = 150 °C Values 1200 1200 75 / 45 140 / 90 ± 20 350 / 125 / 125 – 40 . . .+150 (125) 2 500 Class F 55/150/56 D1-6 9) 600 1800 D7 15 30 200 200 D8 30 60 350 600 V V A A V W °C V SEMITRANS® M IGBT Modules Units www.DataSheet4U.