SKIIP21NAB12
SKIIP21NAB12 is IGBT POWER MODULE manufactured by Semikron Danfoss.
SKii P 21 NAB 12
- SKii P 21 NAB 12 I Absolute Maximum Ratings
Symbol Inverter VCES VGES IC ICM IF =
- IC IFM =
- ICM Conditions 1) (Chopper see SKii P 22 NAB 12) 1200 ± 20 16 / 11 32 / 22 24 / 17 48 / 34 1500 25 700 2400
- 40 . . . + 150
- 40 . . . + 125 2500 V V A A A A V A A A2s °C °C V Values Units
Theatsink = 25 / 80 °C tp < 1 ms; Theatsink = 25 / 80 °C Theatsink = 25 / 80 °C tp < 1 ms; Theatsink = 25 / 80 °C
Mini SKii P 2 SEMIKRON integrated intelligent Power SKii P 21 NAB 12 SKii P 21 NAB 12 I 3) 3-phase bridge rectifier + braking chopper + 3-phase bridge inverter
Case M2
Bridge Rectifier VRRM ID Theatsink = 80 °C tp = 10 ms; sin. 180 °, Tj = 25 °C IFSM tp = 10 ms; sin. 180 °, Tj = 25 °C I2t Tj Tstg Visol AC, 1 min.
Characteristics
Symbol Conditions 1) IGBT
- Inverter IC = 10 A Tj = 25 (125) °C VCEsat VCC = 600 V; VGE = ± 15 V td(on) IC = 10 A; Tj = 125 °C tr Rgon = Rgoff = 150 Ω td(off) inductive load tf Eon + Eoff Cies VCE = 25 V; VGE = 0 V, 1 MHz per IGBT Rthjh IGBT
- Chopper
- VCEsat IC = 15 A Tj = 25 (125) °C VCC = 600 V; VGE = ± 15 V td(on) IC = 15 A; Tj = 125 °C tr Rgon = Rgoff = 82 Ω td(off) inductive load tf Eon + Eoff Cies VCE = 25 V; VGE = 0 V, 1 MHz per IGBT Rthjh Diode 2)
- Inverter & Chopper VF = VEC IF = 15 A Tj = 25 (125) °C Tj = 125 °C VTO Tj = 125 °C r T IF = 15 A, VR =
- 600 V IRRM di F/dt =
- 400 A/µs Qrr VGE = 0 V, Tj = 125 °C Eoff per diode Rthjh min.
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- - typ. max. w w w t a .D
S a
V 2,7(3,3) 3,2(3,9) ns 110 55 ns 100 50 ns 570 380 ns 120 80 m J
- 2,7 n F
- 0,53 K/W 1,8
- e h
U 4 t e
Units
.c m o
UL recognized file no. E63532
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V 2,5(3,1) 3,0(3,7) ns 110 55 ns 90 45 ns 600 400 ns 100 70 m J
- 4,0 n F
- 1,0 K/W...