• Part: SKIIP21NAB12
  • Description: IGBT POWER MODULE
  • Manufacturer: Semikron Danfoss
  • Size: 320.31 KB
Download SKIIP21NAB12 Datasheet PDF
Semikron Danfoss
SKIIP21NAB12
SKIIP21NAB12 is IGBT POWER MODULE manufactured by Semikron Danfoss.
SKii P 21 NAB 12 - SKii P 21 NAB 12 I Absolute Maximum Ratings Symbol Inverter VCES VGES IC ICM IF = - IC IFM = - ICM Conditions 1) (Chopper see SKii P 22 NAB 12) 1200 ± 20 16 / 11 32 / 22 24 / 17 48 / 34 1500 25 700 2400 - 40 . . . + 150 - 40 . . . + 125 2500 V V A A A A V A A A2s °C °C V Values Units Theatsink = 25 / 80 °C tp < 1 ms; Theatsink = 25 / 80 °C Theatsink = 25 / 80 °C tp < 1 ms; Theatsink = 25 / 80 °C Mini SKii P 2 SEMIKRON integrated intelligent Power SKii P 21 NAB 12 SKii P 21 NAB 12 I 3) 3-phase bridge rectifier + braking chopper + 3-phase bridge inverter Case M2 Bridge Rectifier VRRM ID Theatsink = 80 °C tp = 10 ms; sin. 180 °, Tj = 25 °C IFSM tp = 10 ms; sin. 180 °, Tj = 25 °C I2t Tj Tstg Visol AC, 1 min. Characteristics Symbol Conditions 1) IGBT - Inverter IC = 10 A Tj = 25 (125) °C VCEsat VCC = 600 V; VGE = ± 15 V td(on) IC = 10 A; Tj = 125 °C tr Rgon = Rgoff = 150 Ω td(off) inductive load tf Eon + Eoff Cies VCE = 25 V; VGE = 0 V, 1 MHz per IGBT Rthjh IGBT - Chopper - VCEsat IC = 15 A Tj = 25 (125) °C VCC = 600 V; VGE = ± 15 V td(on) IC = 15 A; Tj = 125 °C tr Rgon = Rgoff = 82 Ω td(off) inductive load tf Eon + Eoff Cies VCE = 25 V; VGE = 0 V, 1 MHz per IGBT Rthjh Diode 2) - Inverter & Chopper VF = VEC IF = 15 A Tj = 25 (125) °C Tj = 125 °C VTO Tj = 125 °C r T IF = 15 A, VR = - 600 V IRRM di F/dt = - 400 A/µs Qrr VGE = 0 V, Tj = 125 °C Eoff per diode Rthjh min. - - - - - - - - - - - - - - - - typ. max. w w w t a .D S a V 2,7(3,3) 3,2(3,9) ns 110 55 ns 100 50 ns 570 380 ns 120 80 m J - 2,7 n F - 0,53 K/W 1,8 - e h U 4 t e Units .c m o UL recognized file no. E63532 - - V 2,5(3,1) 3,0(3,7) ns 110 55 ns 90 45 ns 600 400 ns 100 70 m J - 4,0 n F - 1,0 K/W...