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SKM150GAL12V - IGBT

Key Features

  • V-IGBT = 6. Generation Trench V-IGBT (Fuji).
  • CAL4 = Soft switching 4. Generation CAL-diode.
  • Insulated copper baseplate using DBC technology (Direct Copper Bonding).
  • Increased power cycling capability.
  • With integrated gate resistor.
  • UL recognized, file no. E63532.
  • Lowest switching losses at High di/dt Typical.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SKM150GAL12V SEMITRANS® 2 SKM150GAL12V Features • V-IGBT = 6. Generation Trench V-IGBT (Fuji) • CAL4 = Soft switching 4. Generation CAL-diode • Insulated copper baseplate using DBC technology (Direct Copper Bonding) • Increased power cycling capability • With integrated gate resistor • UL recognized, file no. E63532 • Lowest switching losses at High di/dt Typical Applications* • DC/DC – converter • Brake chopper • Switched reluctance motor • DC – Motor Remarks • Case temperature limited to Tc = 125°C max. • Recommended Top = -40 ...